Forming way of Silicon Carbide Ceramic



The bending strength for SiC Ceramics is two times of Recrystallization Silicon Carbide Ceramic,is about 1.5 times of Silicon Nitride bond Silicon Carbide Ceramic


Reaction Bonded Silicon Carbide Ceramic(RBSIC or SISIC) has many characteristic such as high strength,extreme hardness,wear resistance,high temperature tolerance,corrosion resistance,oxidization resistance,thermal shock resistance,high thermal conductivity,low coefficient of thermal expansion,creep resistance under high temperature and so on.We can make sisic ceramic according to your requirement.

Silicon Carbide Ceramic is formed in two ways, Reaction Bonding and Sintering.Each forming method greatly affects the end microstructure.


Reaction bonded Silicon Carbide ceramic(RBSIC or SISIC) is made by infiltrating compacts made of mixtures of SiC and Carbon with liquid Silicon. The Silicon reacts with the Carbon forming more SiC which bonds the initial SiC particles.

Sintered Silicon Carbide ceramic(SSiC) is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000ÂșC or higher.

Both forms of Silicon Carbide (SiC) are highly wear resistant with good mechanical properties, including high temperature strength and thermal shock resistance.

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